| Name | leak |
| Status |
| Status of element in file |
| Stable
|
| Description |
| As described in the ChannelML file |
| Simple example of a leak/passive conductance. Note: for GENESIS cells with a single leak conductance,
it is better to use the Rm and Em variables for a passive current. |
| Current voltage relationship | ohmic |
| Ion involved in channel |
| The ion which is actually flowing through the channel and its default reversal potential.
Note that the reversal potential will normally depend on the internal and external concentrations of the ion at the segment on which the channel is placed. |
| non_specific (default Enon_specific = -54.3 mV)
|
| Default maximum conductance density |
| Note that the conductance density of the channel will be set when it is placed on the cell. |
| Gmax = 0.3 mS cm-2 |
| Conductance expression |
| Expression giving the actual conductance as a function of time and voltage |
| Gnon_specific(v,t) = Gmax
|
| Current due to channel |
| Ionic current through the channel |
| Inon_specific(v,t) =
Gnon_specific(v,t) * (v - Enon_specific) |
